IGBT

Type of
device

Technology

Maximal voltage
Vce, V

Current,
Ic, A

Features

Status of
development

IGBT-V0

NPT

1200

50, 75, 100

- Positive temperature relation of transistor’s
saturation voltage (Vcesat).
- Low static and dynamic losses.
- Rectangular area of safety operation
(SOA).
- High resistivity to short circuit.

Mass production

1700

15, 25, 50, 75

IGBT(extension)

Type of
device

Technology

Maximal voltage
Vce, V

Current,
Ic, A

Features

Status of
development

IGBT-V4

NPT+

3300

50

- Low gate charge (Low charge).
- Self-limiting of short circuit current.
- Higher resistivity to short circuit.
- Positive temperature relation of transistor’s saturation voltage (Vcesat).
- Low static and dynamic losses.
- Rectangular area of safety operation (SOA).

Mass production

FRD

Type of
device

Maximal voltage
Vce, V

Current,
Ic, A

Features

Status of
development

FRD-V0

400

50, 75, 100

- Positive temperature relation of diode’s forward voltage drop VFthroughout the whole range of operating currents.
- Low energy losses Erecfor reverse recovery.
- Low reverse recovery charge Qrr.

Mass production